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246 积分 2024-07-18 加入
Tunneling electroresistance effect and low ON-state resistance-area product in monolayer-In2Se3-based van der Waals ferroelectric tunnel junctions
6天前
已完结
Achieving giant tunneling electroresistance ratio of up to 109% in sliding ferroelectric tunnel junctions based on MoGe2N4 bilayer
8天前
已完结
Realizing tunneling electroresistance effect in the Au/h-BN/In2Se3/Au vertical ferroelectric tunnel junction
8天前
已完结
Micromagnetics Simulation as a Supplement to and Diagnostic for Lorentz Transmission Electron Microscopy
17天前
已关闭
All two-dimensional van der Waals magnetic tunneling junctions
21天前
已完结
Nonvolatile spin logic-in-memory strategy by fully electrically multistate modulation in two-dimensional A-type antiferromagnets
2个月前
已完结
UV light-induced graphene/GaN heterojunction photomemory devices with negative photocurrent
2个月前
已完结
Non-collinear antiferromagnetic spintronics
2个月前
已完结
Two-dimensional group-III nitrides and devices: a critical review
3个月前
已完结
Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications
3个月前
已完结
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