高贵的高丽
Lv11
30 积分
2025-01-18 加入
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已经找到【积分已退回】
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已经找到【积分已退回】
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感谢
1小时前
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感觉文章本来呈现有问题
1小时前
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非常感谢
1小时前
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不好意思,文献好像不对,这个文章应该有几个章节,如果能找到,麻烦再上传一次,非常感谢
文献摘要内容为:This chapter focuses on new trends in the development of photon detectors and photodetectors arrays based on them. In particular, new strategies in the development of IR photodetectors are analyzed, which include the development of detectors such as high operating temperature detectors, quantum well infrared photodetectors, type-II strained-layer superlattices, barrier detectors, multistage or cascade IR detectors, quantum dot infrared photodetectors, multicolor IR detectors, and photon trapping detectors. The possibilities of manufacturing IR detectors based on semiconductor nanowires and 2D materials are also considered. The advantages and limitations of these approaches in the development of an IR photodetector are discussed as well.
1小时前
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文献好像不太对
摘要内容为:This chapter focuses on new trends in the development of photon detectors and photodetectors arrays based on them. In particular, new strategies in the development of IR photodetectors are analyzed, which include the development of detectors such as high operating temperature detectors, quantum well infrared photodetectors, type-II strained-layer superlattices, barrier detectors, multistage or cascade IR detectors, quantum dot infrared photodetectors, multicolor IR detectors, and photon trapping detectors. The possibilities of manufacturing IR detectors based on semiconductor nanowires and 2D materials are also considered. The advantages and limitations of these approaches in the development of an IR photodetector are discussed as well.
1小时前