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80 积分 2025-12-17 加入
(Invited) Surface Free Energy and Interfacial Strain in HfO2 and Hzo Ferroelectric Formation
24天前
已关闭
A Statistical Approach for Evaluating the Spatial Distribution and Local Atomic Environment of Dopants Using Atom Probe Tomography
2个月前
已完结
Physical and Electrical Properties of MOCVD and ALD Deposited HfZrO4 Gate Dielectrics for 32nm CMOS High Performance Logic SOI Technologies
3个月前
已关闭
Three-Dimensional Elemental Analysis of Commercial 45 nm Node Device with High-$k$/Metal Gate Stack by Atom Probe Tomography
3个月前
已关闭
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