Lv3
210 积分 2025-02-09 加入
Improvement of unipolar power device performance using a polarization junction
18天前
已完结
GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation
18天前
已关闭
Threshold Voltage Stability Enhancing Technology for p-GaN HEMTs Using Hybrid Gate Structure
19天前
已完结
A Bootstrap Diode Fabricated by a New 1200-V Silicon-on-Insulator Bipolar-CMOS-DMOS Process for High Voltage Integrated Circuits
19天前
已完结
High-k Oxide Field-Plated Vertical (001) β-Ga2O3Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm2
19天前
已完结
Charge Balance Design of 1200-V E-Mode p-GaN Gate HEMT Toward Enhanced Breakdown Voltage and Dynamic Stability
19天前
已完结
Super Field Plate LIGBT with Improved Performance for Both Cell and Terminal Region
23天前
已完结
Investigations on Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature
24天前
已完结
Novel AC coupled gate driver for ultra fast switching of normally-off SiC JFETs
28天前
已完结
Performance of 15 mm<sup>2</sup> 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current
28天前
已完结
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