Lv4
490 积分 2024-07-10 加入
First-principles study of dielectric breakdown in NiO
8天前
已关闭
Deposition of sputtered NiO as a p-type layer for heterojunction diodes with Ga2O3
1个月前
已完结
Low turn-on voltage and 2.3 kV β-Ga2O3 heterojunction barrier Schottky diodes with Mo anode
1个月前
已完结
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
1个月前
已完结
Effect of drift layer doping and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
1个月前
已完结
Investigation of lithium (Li) doping on the resistive switching property of p-Li:NiO/n- -Ga2O3 thin-film based heterojunction devices
1个月前
已完结
Ga2O3/NiO junction barrier Schottky diodes with ultra-low barrier TiN contact
1个月前
已完结
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
3个月前
已完结
High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes
4个月前
已完结
Metalorganic chemical vapor deposition of (100) β-Ga2O3 on on-axis Ga2O3 substrates
5个月前
已完结
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