Lv1
48 积分 2025-09-02 加入
(Invited) Sublimation Growth of 3C-SiC: Status and Prospects
2个月前
已关闭
Advances and challenges in 4H silicon carbide: defects and impurities
3个月前
已完结
Dislocations in 4H silicon carbide
3个月前
已完结
Impurities and defects in 4H silicon carbide
3个月前
已完结
High pressure study of graphitization of diamond crystals
5个月前
已完结
General approach for synthesizing hexagonal diamond by heating post-graphite phases
7个月前
已完结
皖公网安备34019202002308
