Lv4
580 积分 2025-03-10 加入
Electronic excitation-induced tunneling and charge-trapping explored by in situ electrical characterization in Ni/HfO₂/β-Ga₂O₃ metal–oxide–semiconductor devices
2天前
已关闭
Interface states at the SiO2-Si interface
28天前
已完结
Deep level defect states in β-, α-, and ɛ-Ga2O3 crystals and films: Impact on device performance
1个月前
已完结
Border traps: Issues for MOS radiation response and long-term reliability
4个月前
已完结
Band offsets, Schottky barrier heights, and their effects on electronic devices
5个月前
已完结
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