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230 积分 2022-01-08 加入
Gate Oxide Failure Mechanisms of SiC MOSFET Related to Electro-Thermomechanical Stress Under HTRB and HTGB Test
22天前
已完结
Review of HTRB and HTGB Reliability of SiC MOSFETs
22天前
已完结
Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures
2个月前
已完结
Low Roughness SiC Trench Formed by ICP Etching with Sacrificial Oxidation and Ar Annealing Treatment
4个月前
已完结
Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules
5个月前
已完结
SiC IGBT degradation mechanism investigation under HV-H3TRB tests
5个月前
已完结
Study and reduction of the surface pits in 4H-SiC epitaxial wafer
1年前
已完结
Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
1年前
已完结
Defect Reduction in Epilayers for SiC Trench MOSFETs by Enhanced Epitaxial Growth
1年前
已完结
SiC Mass Commercialization: Present Status and Barriers to Overcome
1年前
已完结
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