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890 积分 2020-03-30 加入
Reliability Comparison of Commercial Planar and Trench 4H-SiC Power MOSFETs
4小时前
已完结
Operation of 1.2-kV 4H-SiC accumulation and inversion channel split-gate (SG) MOSFETs at elevated temperatures
21天前
已完结
Optimization of the JFET region of 1.2 kV SiC MOSFETs for improved high frequency figure of merit (HF-FOM)
21天前
已完结
Avalanche reliability of planar-gate SiC MOSFET with varied JFET region width and its balance with characteristic performance
26天前
已完结
The 1.2-kV 4H-SiC OCTFET: A new cell topology with improved high-frequency figures-of-merit
26天前
已完结
Impact of cell topology on characteristics of 600 V 4H-SiC planar MOSFETs
26天前
已完结
Comparison of four cell topologies for 1.2-kV accumulation- and inversion-channel 4H-SiC MOSFETs: Analysis and experimental results
26天前
已完结
Investigation of Unclamped Inductive Switch Characteristics in 4H-SiC MOSFETs With Different Cell Topologies
1个月前
已完结
Total-ionizing-dose radiation-induced electric field redistribution model and hardening method for SGT MOSFET
3个月前
已完结
A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects
3个月前
已完结
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