标题 |
High-Performance β-Ga2O3-Based Junction Barrier Schottky Diodes with Improved Reverse Recovery Characteristics
具有改进的反向恢复特性的高性能β-Ga2O3基结势垒肖特基二极管
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网址 | |
DOI |
10.1109/TED.2023.3277777
doi
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其它 |
期刊名称:IEEE Transactions on Electron Devices 发表年份:2023 作者:Y. G. Wang, H. Y. Liu, Y. J. Lv, et al. |
求助人 | |
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