| 标题 |
Parasitics Optimization for GaN HEMTs in Conventional Housing-Type Power Modules
传统外壳型功率模块中GaN HEMT的寄生优化
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| 其它 |
Abstract: The magnetic flux-cancellation design is difficult to be implemented in the conventional housing-type power modules due to the single-layer current conducting path of the substrate. Also, the height of the module profile will introduce stray inductance between the gate driver board and power switches. This paper aims to remove the obstacles of applying GaN in conventional housing-type packaging and realizing efficient and reliable switching transition. The effects of the parasitics in the power stage are analyzed and experimentally verified. The layout rules are summarized accordingly. What's more, a novel power module housing design is also proposed in this paper. |
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cdercder
劲秉
昏睡的蟠桃
HEIKU
痴情的博超
Cui
随遇而安
淡淡猕猴桃
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iNk
pluto
JPH1990
科研01
坚强的广山
迷人秋烟
路人
大方汉堡
科研小民工
Jennifer
遇上就这样吧
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