材料科学
薄脆饼
热膨胀
有限元法
晶圆级封装
热的
复合材料
压力(语言学)
制作
残余应力
固化(化学)
焊接
热传递
结构工程
图层(电子)
电子工程
工程类
光电子学
语言学
哲学
病理
气象学
物理
医学
替代医学
作者
Shilu Zhou,Cheng Zhong,Liang Shan,Jinhui Li,Chuan He,Da Huang,Jibao Lu,Guoping Zhang,Rong Sun
标识
DOI:10.1109/icept56209.2022.9873188
摘要
Redistribution layer (RDL) is a significant component of fan-out wafer level packaging (FOWLP). However, reliability issues such as cracks, layer separation and warpage are prone to occur during the fabrication of RDL. Thermal stress concentration owning to coefficient of thermal expansion (CTE) mismatch is a crucial cause of reliability issues. In this article, the finite element analysis (FEA) method was adopted to simulate the thermal stress distribution of the three-layer RDL structure during the cooling process after thermal curing of PI. Based on the thermal stress distribution, the critical location most inclined to interfacial failure was determined. Further, by modifying the dimensions or material properties of the simulation model, the effects of the thickness of Cu wires, the opening diameter of Cu vias, the inclination angle of Cu vias, and two different kinds of PIs on the thermal stress of critical part in the RDL were investigated. In accordance with the simulation results, corresponding suggestions for the structural dimensions of the RDL and the properties of the PI materials were proposed.
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