非易失性存储器
材料科学
晶体管
光电子学
纳米颗粒
场效应晶体管
阅读(过程)
纳米-
薄膜晶体管
纳米技术
图层(电子)
电气工程
电压
复合材料
工程类
政治学
法学
作者
Jie Liu,Changhai Liu,Xiao‐Jian She,Qijun Sun,Xu Gao,Sui‐Dong Wang
摘要
High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.
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