A Numerical Investigation of the Strain Effect on Saturation Optical Intensity in Electroabsorption Modulators Based on Asymmetric Intra-step-barrier Coupled Double Strained Quantum Wells

In this paper, the strain effect on saturation optical intensity in electroabsorption modulators (EAMs) based on asymmetric intra‐step‐barrier coupled double strained quantum well (AICD‐SQWs) active region is theoretically investigated and compared with intra‐step quantum well (IQW) structure. For this purpose, the thermionic emission and tunneling escape processes are taken into account and the escape times of photogenerated carriers are calculated. Then, the electroabsorption coefficient is calculated for different well strains for TE input light polarization. Finally, the saturation optical intensity of electroabsorption modulators with AICD‐SQW structures in comparison with IQW structure is evaluated. Numerical results show that the tensile strain of well has the most significant effect on the saturation optical intensity of electroabsorption modulators with AICD‐SQW structures due to reduction in escape times.