雪崩光电二极管
响应度
光电探测器
异质结
光电流
磷化铟
光电导性
量子效率
作者
Xiaofang Wang,Weida Hu,Xin Chen,W. J. Lu,Hengjing Tang,Tianxin Li,Hengfeng Gong
标识
DOI:10.1007/s11082-009-9279-0
摘要
We report on 2D simulations of dark current for InP/In0.53Ga0.47aAs/InP p-i-n photodiode. Our simulation result is in good agreement with experiment confirming that generation-recombination effect is the dominant source of the dark current at low bias. Effects of the thickness and doping concentration of the absorption layer on the dark current are discussed in detail.
科研通智能强力驱动
Strongly Powered by AbleSci AI