纳米柱
激光阈值
材料科学
光子晶体
光电子学
异质结
激光器
光子学
化学气相沉积
砷化镓
纳米光子学
波长
光学
纳米技术
纳米结构
物理
作者
Adam C. Scofield,Se‐Heon Kim,Jenessa R. Shapiro,Andrew Lin,Baolai Liang,Axel Scherer,Diana L. Huffaker
出处
期刊:Nano Letters
[American Chemical Society]
日期:2011-11-18
卷期号:11 (12): 5387-5390
被引量:108
摘要
The directed growth of III-V nanopillars is used to demonstrate bottom-up photonic crystal lasers. Simultaneous formation of both the photonic band gap and active gain region is achieved via catalyst-free selective-area metal-organic chemical vapor deposition on masked GaAs substrates. The nanopillars implement a GaAs/InGaAs/GaAs axial double heterostructure for accurate, arbitrary placement of gain within the cavity and lateral InGaP shells to reduce surface recombination. The lasers operate single-mode at room temperature with low threshold peak power density of ∼625 W/cm2. Cavity resonance and lasing wavelength is lithographically defined by controlling pillar pitch and diameter to vary from 960 to 989 nm. We envision this bottom-up approach to pillar-based devices as a new platform for photonic systems integration.
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