钙钛矿(结构)
载流子
光电子学
发光二极管
材料科学
钝化
二极管
载流子寿命
量子效率
自发辐射
工程物理
纳米技术
化学
物理
光学
硅
结晶学
激光器
图层(电子)
作者
Li‐Li Xu,Gaoyu Liu,Hengyang Xiang,Run Wang,Qingsong Shan,Shichen Yuan,Bo Cai,Zhi Li,Weijin Li,Shengli Zhang,Haibo Zeng
出处
期刊:Applied physics reviews
[American Institute of Physics]
日期:2022-05-13
卷期号:9 (2)
被引量:26
摘要
In recent years, perovskite light-emitting diodes (PeLEDs) have developed rapidly with the highest external quantum efficiency exceeding 20%. Their unbalanced carrier injection and non-radiative recombination assisted by defects lead to the destruction of perovskite crystal structures and poor device stability, which hinders their commercialization process. Thus, to understand the origin of device performance, the key is to figure out the charge-carrier dynamics of the devices. In this review, the charge-carrier dynamics of perovskites are discussed, including radiative and non-radiative recombination, together with the various passivation strategies. Second, we focus on the interfacial carrier dynamics and its influence on device performance. Various strategies to improve the injection balance have been implemented to address the inherent challenges associated with PeLEDs. Last but not least, the characterization techniques of PeLEDs are provided to study the carrier dynamics of PeLEDs.
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