静态随机存取存储器
接口
异步通信
睡眠模式
计算机科学
电压
随机存取
端口(电路理论)
能源消耗
嵌入式系统
计算机硬件
电气工程
功率(物理)
功率消耗
工程类
计算机网络
物理
量子力学
作者
Réda Boumchedda,Adam Makosiej,Jean-Philippe Noël,B. Giraud,Jean‐Frédéric Christmann,Ivan Miro-Panades,L. Ciampolini,Pablo Royer,C. Mounet,David Turgis,Édith Beigné
出处
期刊:IEEE solid-state circuits letters
[Institute of Electrical and Electronics Engineers]
日期:2018-09-01
卷期号:1 (9): 186-189
被引量:4
标识
DOI:10.1109/lssc.2019.2899971
摘要
This letter presents a single-rail two-port static random-access memory (SRAM) designed in 28-nm FD-SOI technology specifically for a synchronous/asynchronous Internet of Things node. This SRAM supports an asynchronous interface communication and a fast transition sleep/active mode. It enables simultaneous synchronous and asynchronous accesses on its two independent ports, as well as a selective virtual ground (SVGND) to support ultralow voltage in read operations. Measurements on a 64-kb memory macro prove the functionality for a supply voltage ranging from 0.25 to 1.25 V. The sleep mode enables 158× reduction of the SVGND static-power consumption. The SVGND read assist achieves a gain of 50 mV on the read port operations lowest voltage. The memory achieves, at 0.25 V and 27 °C, an average energy cost per access of 1.45 fJ/bit at 451 kHz and a leakage of 25 pW/bit in sleep mode.
科研通智能强力驱动
Strongly Powered by AbleSci AI