异质结双极晶体管
手机
线性
放大器
电气工程
邻道
电容器
功率增加效率
邻道功率比
电子工程
预失真
晶体管
射频功率放大器
材料科学
工程类
电压
CMOS芯片
双极结晶体管
作者
Wael Y. Refai,W.A. Davis
出处
期刊:IEEE Transactions on Microwave Theory and Techniques
日期:2020-08-01
卷期号:68 (8): 3519-3531
被引量:14
标识
DOI:10.1109/tmtt.2020.3002161
摘要
This article presents the design techniques for a multimode multiband (MMMB) linear RF power amplifier (PA) with a high efficiency, suitable for wireless handset multichip modules. The PA operates with high efficiency at the saturated output power and maintains high linearity with an enhanced efficiency at the back-off power. It is, thus, able to operate in multimodes (saturated/linear) and covers multibands (814-915 MHz; bands: 5/8/18/19/20/26) without reconfiguration, representing a novel solution for the converged PA module architecture to reduce the number of PAs within the handset. A new technique to the handset industry, class-J, is adopted to improve the efficiency while maintaining the linearity. To the best of our knowledge, this work provides the first implementation of the class-J using the GaAs heterojunction bipolar transistor (HBT) technology in the multichip PA modules. The utilization of the GaAs HBT adds more degrees of freedom to enhance the linearity. A PA module, consisting of a GaAs HBT die mounted on a four-layer laminate, is designed. The die is fabricated using the flip-chip technology. The output matching network and the control/bias network are fabricated on the laminate using the printed inductors and the surface-mount device (SMD) capacitors. The results validate the design techniques, showing 2G power added efficiency (PAE) 62%, 2.5G error vector magnitude (EVM) ≤ 3%, and 3G adjacent channel leakage ratio (ACLR) of 5MHz ≤ -35 dBc. The design achieves a higher PAE than other reported reconfigurable and complex MMMB PAs, with comparable linearity.
科研通智能强力驱动
Strongly Powered by AbleSci AI