Heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

Abstract We study epitaxial growth and physical properties of heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In 0.84− x ,Ga x ,Fe 0.16 )Sb thin films (Ga content x = 2%–10%, Fe content fixed at 16%). The (In 0.84− x ,Ga x ,Fe 0.16 )Sb films have a zinc-blende-type crystal structure without any other second phase, and all the samples exhibit intrinsic ferromagnetism with high Curie temperature (>300 K). The carrier type of the (In 0.84− x ,Ga x ,Fe 0.16 )Sb films is found to change by varying x , and a carrier-type phase diagram of (In,Ga,Fe)Sb is presented. These results suggest that (In,Ga,Fe)Sb is a promising material for semiconductor spintronic devices, such as ferromagnetic p-n junctions, operating at RT.