电介质
电容器
介电常数
电容
等效电路
材料科学
微波食品加热
寄生提取
电子工程
光电子学
计算机科学
电气工程
工程类
物理
电信
电压
电极
量子力学
作者
Anaïs Guerenneur,Dmitry Kouznetsov,Daniele Narducci,Federica Luciano,Xiao Sun,Pol Van Dorpe,Florin Ciubotaru,Christoph Adelmann
标识
DOI:10.1088/1361-6501/ad6342
摘要
Abstract An equivalent fitting analysis scheme is proposed for extending a method developed for high-k dielectrics to correctly characterise low-k dielectrics, which are more sensitive to various parasitics. The same concentric capacitor devices and measurement setup are used as in the original method, as they are easy to fabricate, which made the old approach attractive in the first place. The physical model used in the analysis step of the original method, which overestimates the dielectric permittivity, is improved by implementing fringing fields and a parasitic gap capacitance as a circuit element. The new approach is verified on experimental data and is demonstrated to more accurately determine the dielectric permittivity compared to the original method.
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