串联
材料科学
钙钛矿(结构)
硅
纳米技术
光电子学
化学
结晶学
复合材料
作者
Zetao Ding,Chenxia Kan,Shengguo Jiang,Meili Zhang,Hongyu Zhang,Wei Liu,Mingdun Liao,Zhenhai Yang,Pengjie Hang,Zhenhai Yang,Xuegong Yu,Jichun Ye
标识
DOI:10.1038/s41467-024-52309-2
摘要
Tunnel oxide passivated contact (TOPCon) silicon solar cells are rising as a competitive photovoltaic technology, seamlessly blending high efficiency with cost-effectiveness and mass production capabilities. However, the numerous defects from the fragile silicon oxide/c-Si interface and the low field-effect passivation due to the inadequate boron in-diffusion in p-type polycrystalline silicon (poly-Si) passivated contact reduce their open-circuit voltages (V
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