神经形态工程学
材料科学
铁电性
光电子学
反铁电性
范德瓦尔斯力
记忆电阻器
非易失性存储器
极化(电化学)
相变存储器
凝聚态物理
纳米技术
电子工程
计算机科学
物理
化学
机器学习
工程类
电介质
物理化学
量子力学
人工神经网络
分子
图层(电子)
作者
Yinchang Ma,Yuan Yan,Linqu Luo,Sebastián Pazos,Chenhui Zhang,Xiang Lv,Maolin Chen,Chen Liu,Yizhou Wang,Aitian Chen,Yan Li,Dongxing Zheng,Rongyu Lin,Hanin Algaidi,Minglei Sun,Jefferson Zhe Liu,Shaobo Tu,Husam N. Alshareef,Cheng Gong,Mario Lanza
标识
DOI:10.1038/s41467-023-43628-x
摘要
Layered thio- and seleno-phosphate ferroelectrics, such as CuInP2S6, are promising building blocks for next-generation nonvolatile memory devices. However, because of the low Curie point, the CuInP2S6-based memory devices suffer from poor thermal stability (<42 °C). Here, exploiting the electric field-driven phase transition in the rarely studied antiferroelectric CuCrP2S6 crystals, we develop a nonvolatile memristor showing a sizable resistive-switching ratio of ~ 1000, high switching endurance up to 20,000 cycles, low cycle-to-cycle variation, and robust thermal stability up to 120 °C. The resistive switching is attributed to the ferroelectric polarization-modulated thermal emission accompanied by the Fowler-Nordheim tunneling across the interfaces. First-principles calculations reveal that the good device performances are associated with the exceptionally strong ferroelectric polarization in CuCrP2S6 crystal. Furthermore, the typical biological synaptic learning rules, such as long-term potentiation/depression and spike amplitude/spike time-dependent plasticity, are also demonstrated. The results highlight the great application potential of van der Waals antiferroelectrics in high-performance synaptic devices for neuromorphic computing.
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