材料科学
钝化
图层(电子)
硅
光电子学
氧化物
太阳能电池
兴奋剂
氧化硅
分析化学(期刊)
纳米技术
化学
冶金
色谱法
氮化硅
作者
Ying Zhou,Dongming Zhao,Xiangrui Yu,Menglei Li,Zhao Zhi-guo,Chuanke Chen,Zizhen Lin,Lichuang Wang,Xiongfei Chen,Xiaolei Li,Haiwei Huang,Rui Li,Zhidan Hao,Yun Liu,Jinghua Niu,Xue Yao
标识
DOI:10.1016/j.solmat.2023.112657
摘要
Effects of the ultra-thin silicon oxide (SiOx) on tunnel oxide passivated contact solar cells (TOPCon) are investigated in this paper. The experiment is fabricated to study the TOPCon electrical performance with different SiOx thickness and the champion efficiency is achieved by the TOPCon with a 1.5 nm SiOx layer, with Voc 698.93 mV, Jsc 40.14 mA/cm2, FF 81.03 and efficiency 22.73 %. For futher understanding, EDNA2 and AFORS-HET are used to simulate the relationship between the SiOx thickness, rear SRV and the doping concentration in n+ layer. It indicates that the total J0 at the SiOx-(c-Si) interface (J0, interface) can be affected by the phosphorus concentration at the SiOx-(c-Si) interface. Besides, due to the variation of SRV or P-doped concentration, different recombination mechanisms, including auger recombination and surface recombination, will dominant the total J0, interface. In addition, the sensitivity of TOPCon solar cells electrical performance to SiOx thickness can be affected by rear SRV, and the sensitivity of TOPCon solar cells electrical performance to rear SRV can be affected by SiOx thickness.
科研通智能强力驱动
Strongly Powered by AbleSci AI