材料科学
图层(电子)
位错
光电子学
缓冲器(光纤)
堆积
宽禁带半导体
基质(水族馆)
叠加断层
复合材料
化学
电气工程
海洋学
地质学
工程类
有机化学
作者
Yuxia Feng,Huarui Sun,Xuelin Yang,K. Liu,Jie Zhang,Jianfei Shen,Danshuo Liu,Zidong Cai,Fujun Xu,Ning Tang,Tongjun Yu,Xinqiang Wang,Weikun Ge,Bo Shen
摘要
High quality GaN films on SiC with low thermal boundary resistance (TBR) are achieved by employing an ultrathin low Al content AlGaN buffer layer. Compared with the conventional thick AlN buffer layer, the ultrathin buffer layer can not only improve the crystal quality of the subsequent GaN layer but also reduce the TBR at the GaN/SiC interface simultaneously. The ultrathin AlGaN buffer layer is introduced by performing a pretreatment of the SiC substrate with trimethylaluminum followed by the growth of GaN with an enhanced lateral growth rate. The enhanced lateral growth rate contributes to the formation of basal plane stacking faults (BSFs) in the GaN layer, where the BSFs can significantly reduce the threading dislocation density. We reveal underling mechanisms of reducing TBR and dislocation density by the ultrathin buffer layer. We propose this work is of great importance toward the performance improvement and cost reduction of higher power GaN-on-SiC electronics.
科研通智能强力驱动
Strongly Powered by AbleSci AI