Simulations of Quantum Transport in Sub-5-nm Monolayer Phosphorene Transistors

Phosphorene is a promising channel material for next-generation electronics, due to its unique in-plane anisotropy, large density of states near the valence-band maximum, and high carrier mobility. Using $a\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ quantum transport simulations, the authors investigate very small, double-gated MOSFETs based on monolayer phosphorene. It is predicted that these transistors can fulfill industrial requirements for ON current, delay time, and power dissipation until the gate length is scaled down to 2 nm.