材料科学
无定形固体
介电常数
电介质
绝缘体(电)
结晶
电容器
电容
薄膜
凝聚态物理
光电子学
错配
栅极电介质
磁滞
电压
电气工程
晶体管
纳米技术
场效应晶体管
结晶学
化学
电极
工程类
物理化学
物理
有机化学
作者
Y. Yamamoto,Koji Kita,Kentaro Kyuno,Akira Toriumi
摘要
Thin HfLaOx films on Si(100) have been investigated as an alternative gate insulator. The introduction of La2O3 into HfO2 causes an increase of crystallization temperature. Furthermore, unlike other Hf-based amorphous materials such as HfSiOx or HfAlOx, the permittivity of HfLaOx keeps a high value (>20). The capacitance-voltage curve of metal oxide semiconductor capacitor using the HfLaOx dielectric film has shown a negligible hysteresis and no frequency dispersion, indicating very small degradations of both interface and bulk properties. In addition, a very low fixed charge density in HfLaOx films is demonstrated from a very small film thickness dependence of the flatband voltage.
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