等效串联电阻
饱和电流
肖特基二极管
二极管
太阳能电池
暗电流
电导
光电子学
材料科学
物理
电气工程
工程类
电压
凝聚态物理
光电探测器
作者
K. Bouzidi,M. Chegaar,Michel Aillerie
标识
DOI:10.1016/j.egypro.2012.06.001
摘要
In this paper, a comparative analysis of three methods to determine the four solar cells parameters (the saturation current (Is), the series resistance (Rs), the ideality factor (n), and the shunt conductance (Gsh)) of the single diode lumped model from its dark curve is presented. These methods are based on Gromov, Werner, and Mikhelashviliet al. methods that were used to extract the Schottky diode parameters. These techniques have been adequately modified, extended to cover the case of solar cells and used to extract the parameters of interest from experimental I-V characteristic of a Poly-Si solar cell under dark condition.
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