钙钛矿(结构)
材料科学
光电子学
电阻随机存取存储器
氧烷
电阻式触摸屏
堆积
凝聚态物理
光谱学
电极
化学
结晶学
电气工程
物理
有机化学
物理化学
量子力学
工程类
作者
Phillip Müller,Faisal K. Chowdhury,V. V. Dremov,Y. Koval,F. Lichtenberg,Sven Müller,Dieter Schmeißer,Rossitza Pentcheva
摘要
We investigated several layered perovskite derivatives of the family AnBnO3n+2, such as LaTiO3.41, CaNbO3.41 and SrNbO3.41, which can be considered as a stacking of blocks consisting of 5 perovskite layers. Electric transport across these layers takes place via intrinsic tunnelling. Mesa devices with a cross-sectional area of 50 to 200 µm2 and a height between 30 and 500 nm were fabricated by electron-beam lithography and ion-beam etching. Both dc I-V characteristics and pulsed current injection have shown switching between different resistive states in these materials. The resistive states have long-term stability, which makes them interesting for memory applications. The transport experiments suggest that switching and resistive memory are controlled by trapping and release of charge carriers. Furthermore, photoelectron and NEXAFS spectroscopy of cleaved LaTiO3.41 surfaces have been performed. The results are compared to recent correlated band theory (LDA+U) calculations.
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