Electrical Conductive Corundum-Structured α-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition

We report the fabrication of electrical conductive tin-doped α-Ga 2 O 3 thin films on c -plane sapphire substrates. The mist chemical vapor deposition method brought tin-doped α-Ga 2 O 3 thin films with high crystallinity without noticeable other phases, as highlighted by the full-width of X-ray diffraction ω-scan rocking curves as small as 40 arcsec, for the tin atomic density in the film upto ∼10 20 cm -3 . The resistivity decreased by more doping of tin, and the α-Ga 2 O 3 thin film with minimum resistivity exhibited n-type conductivity with the Hall mobility of 2.8 cm 2 V -1 s -1 and the carrier density of 2.7 ×10 19 cm -3 .