Properties of Al-SiO2-SiC(3C) Structures with Thermally Grown and PECVD Deposited SiO2 Layers

The 3C-SiC silicon carbide is a promising substrate material for MOS transistors. Parameters of MOS transistors are strongly dependent on the processing of the semiconductor-dielectric system. We study and compare the crucial features of the SiC(3C)-SiO 2 systems with thermally grown and PECVD deposited SiO 2 layers. For both types of systems, using the Al-SiO 2 -SiC(3C) capacitors as test structures, we determine and compare the following properties: The leakage currents and breakdown voltages of SiO 2 layers, densities and distributions in energy of interface traps, band diagrams of the SiC(3C)-SiO 2 systems, as well as structural properties and mechanical stresses in both types of SiO 2 layers. Characterization of the above mentioned features is done using electrical, photoelectric and optical methods, including micro-Raman spectroscopy. The characterization results lead us to the conclusion, that PECVD deposition of SiO 2 followed by wet oxygen annealing is more advantageous for MOSFET fabrication than the thermal growth of the SiO 2 layer.