材料科学
微电子机械系统
相位噪声
科尔皮茨振荡器
功率(物理)
谐振器
作者
Samira Zaliasl,Jim Salvia,Ginel C. Hill,Lijun Will Chen,Kimo Joo,Rajkumar Palwai,Niveditha Arumugam,Meghan Phadke,Shankar Mukherjee,Hae-Chang Lee,C. Grosjean,P.M. Hagelin,Sudhakar Pamarti,T.S. Fiez,Kofi A. A. Makinwa,A. Partridge,Vinod M. Menon
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2015-01-01
卷期号:50 (1): 291-302
被引量:78
标识
DOI:10.1109/jssc.2014.2360377
摘要
This paper describes the first 32 kHz low-power MEMS-based oscillator in production. The primary goal is to provide a small form-factor oscillator (1.5 × 0.8 mm 2 ) for use as a crystal replacement in space-constrained mobile devices. The oscillator generates an output frequency of 32.768 kHz and its binary divisors down to 1 Hz. The frequency stability over the industrial temperature range (-40 °C to 85 °C) is ±100 ppm as an oscillator (XO) or ±3 ppm with optional calibration as a temperature compensated oscillator (TCXO). Supply currents are 0.9 μA for the XO and 1.0 μA for the TCXO at supply voltages from 1.4 V to 4.5 V. The MEMS resonator is a capacitively-transduced tuning fork at 524 kHz. The circuitry is fabricated in 180 nm CMOS and includes low power sustaining circuit, fractional-N PLL, temperature sensor, digital control, and low swing driver.
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