Simultaneous Improvement of Photovoltaic Performance and Stability by In Situ Formation of 2D Perovskite at (FAPbI3)0.88(CsPbBr3)0.12/CuSCN Interface

Abstract To solve the stability issues of perovskite solar cells (PSC), here a novel interface engineering strategy that a versatile ultrathin 2D perovskite (5‐AVA) 2 PbI 4 (5‐AVA = 5‐ammoniumvaleric acid) passivation layer that is in situ incorporated at the interface between (FAPbI 3 ) 0.88 (CsPbBr 3 ) 0.12 and the hole transporting CuSCN is reported. Surface analysis using X‐ray photoelectron spectroscopy confirms the formation of 2D perovskite. Hysteresis is reduced by the interfacial 2D layer, which could be ascribed to improvement of interfacial charge extraction efficiency, associated with suppression of recombination. Moreover, introduction of the interface passivating layer enhances the moisture stability and photostability as compared to the control perovskite film due to hydrophobic nature of 2D perovskite. The unencapsulated device retains 98% of the initial power conversion efficiency (PCE) after 63 d under moisture exposure of about 10% in the dark. A PCE of the control device is boosted from 13.72 to 16.75% as a consequence of enhanced open‐circuit voltage ( V oc ) and fill factor along with slightly increased short‐circuit current density ( J sc ), which results from reduced trap states of (FAPbI 3 ) 0.88 (CsPbBr 3 ) 0.12 as evidenced by enhanced carrier lifetimes and charge extraction. The perovskite/hole transport material interface engineering gives insight into simultaneous improvements of PCE and device stability.