响应度
光电流
光电探测器
异质结
材料科学
紫外线
光电子学
钙钛矿(结构)
暗电流
硅
比探测率
图层(电子)
纳米技术
化学
结晶学
作者
Wei Qu,Shukun Weng,Liping Zhang,Min Sun,Bo Liu,Weijie Du,Yiwen Zhang
标识
DOI:10.35848/1882-0786/abc5fa
摘要
Abstract We developed a self-powered broadband perovskite/silicon hybrid photodetector based on a novel heterostructure of Si/SnO 2 /MAPbI 3 /MoO 3 . The insertion of SnO 2 and MoO 3 was effective in reducing the recombination of photogenerated carriers. By optimizing the thickness of the SnO 2 layer, the detection capabilities of the hybrid photodetectors were significantly improved. The best-performing photodetector had a 40 nm SnO 2 layer, showing a detectivity of 2.23 × 10 12 Jones with a responsivity of 50.9 mA W −1 at 815 nm and a photocurrent/dark current ratio of 3.37 × 10 4 under zero bias. Furthermore, the photodetectors were sensitive to broadband irradiation from 300 to 1150 nm.
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