材料科学
布里渊区
插层(化学)
凝聚态物理
降维
电子结构
钒
结晶学
物理
机器学习
化学
计算机科学
量子力学
冶金
作者
Yuki Nakata,K. Sugawara,A. Chainani,Kunihiko Yamauchi,K. Nakayama,S. Souma,Pei-Yu Chuang,Chun-Yi Cheng,Tamio Oguchi,Keiji Ueno,Takahiro Takahashi,T. Sato
出处
期刊:Physical Review Materials
[American Physical Society]
日期:2019-07-10
卷期号:3 (7)
被引量:21
标识
DOI:10.1103/physrevmaterials.3.071001
摘要
We have performed angle-resolved photoemission spectroscopy on transition-metal dichalcogenide $1T\text{\ensuremath{-}}{\mathrm{HfTe}}_{2}$ to elucidate the evolution of electronic states upon potassium (K) deposition. In pristine ${\mathrm{HfTe}}_{2}$, an in-plane hole pocket and electron pockets are observed at the Brillouin-zone center and corner, respectively, indicating the semimetallic nature of bulk ${\mathrm{HfTe}}_{2}$, with dispersion perpendicular to the plane. In contrast, the band structure of heavily K-dosed ${\mathrm{HfTe}}_{2}$ is obviously different from that of bulk and resembles the band structure calculated for monolayer ${\mathrm{HfTe}}_{2}$. It was also observed that lightly K-dosed ${\mathrm{HfTe}}_{2}$ is characterized by quantized bands originating from bilayer and trilayer ${\mathrm{HfTe}}_{2}$, indicative of staging. The results suggest that the dimensionality crossover from 3D (dimensional) to 2D electronic states due to systematic K intercalation takes place via staging in a single sample. The study provides a strategy for controlling the dimensionality and functionality of novel quantum materials.
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