选择性
材料科学
剥脱关节
催化作用
硫黄
空位缺陷
产量(工程)
光化学
图层(电子)
Crystal(编程语言)
化学工程
化学物理
纳米技术
化学
结晶学
有机化学
冶金
程序设计语言
工程类
计算机科学
石墨烯
作者
Wa Gao,Li Shi,Huichao He,Xiaoning Li,Zhenxiang Cheng,Yong Yang,Jinlan Wang,Qing Shen,Xiaoyong Wang,Yujie Xiong,Yong Zhou,Zhigang Zou
标识
DOI:10.1038/s41467-021-25068-7
摘要
Abstract Artificial photosynthesis, light-driving CO 2 conversion into hydrocarbon fuels, is a promising strategy to synchronously overcome global warming and energy-supply issues. The quaternary AgInP 2 S 6 atomic layer with the thickness of ~ 0.70 nm were successfully synthesized through facile ultrasonic exfoliation of the corresponding bulk crystal. The sulfur defect engineering on this atomic layer through a H 2 O 2 etching treatment can excitingly change the CO 2 photoreduction reaction pathway to steer dominant generation of ethene with the yield-based selectivity reaching ~73% and the electron-based selectivity as high as ~89%. Both DFT calculation and in-situ FTIR spectra demonstrate that as the introduction of S vacancies in AgInP 2 S 6 causes the charge accumulation on the Ag atoms near the S vacancies, the exposed Ag sites can thus effectively capture the forming *CO molecules. It makes the catalyst surface enrich with key reaction intermediates to lower the C-C binding coupling barrier, which facilitates the production of ethene.
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