光电子学
发光二极管
材料科学
宽禁带半导体
二极管
制作
晶体管
双层
半导体
电压
电气工程
工程类
膜
病理
生物
医学
遗传学
替代医学
作者
Xing Lü,Chao Liu,Huaxing Jiang,Xinbo Zou,Anping Zhang,Kei May Lau
摘要
In this letter, monolithic integration of InGaN/GaN light emitting diodes (LEDs) with vertical metal-oxide-semiconductor field effect transistor (VMOSFET) drivers have been proposed and demonstrated. The VMOSFET was achieved by simply regrowing a p- and n-GaN bilayer on top of a standard LED structure. After fabrication, the VMOSFET is connected with the LED through the conductive n-GaN layer, with no need of extra metal interconnections. The junction-based VMOSFET is inherently an enhancement-mode (E-mode) device with a threshold voltage of 1.6 V. By controlling the gate bias of the VMOSFET, the light intensity emitted from the integrated VMOSFET-LED device could be well modulated, which shows great potential for various applications, including solid-state lighting, micro-displays, and visible light communications.
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