单层
材料科学
蓝宝石
基质(水族馆)
单晶
Crystal(编程语言)
光电子学
结晶学
晶体生长
纳米技术
二硫化钼
光学
化学
冶金
物理
地质学
程序设计语言
激光器
海洋学
计算机科学
作者
Yuping Shi,Pengfei Yang,Shaolong Jiang,Zhepeng Zhang,Yahuan Huan,Chunyu Xie,Min Hong,Jianping Shi,Yanfeng Zhang
出处
期刊:Nanotechnology
[IOP Publishing]
日期:2018-11-13
卷期号:30 (3): 034002-034002
被引量:36
标识
DOI:10.1088/1361-6528/aaea3f
摘要
Monolayer molybdenum sulfide (MoS2), a typical semiconducting transition metal dichalcogenide, has emerged as a perfect platform for next-generation electronics and optoelectronics due to its sizeable band gap and strong light-matter interactions. Nevertheless, the controlled growth of a monolayer MoS2 single-crystal with a large-domain size and high crystal quality still faces great challenges. Herein, we demonstrate the fast growth of a large-domain monolayer MoS2 on the c-plane sapphire substrate with the assistance of sodium chloride (NaCl) crystals as the intermediate promoter. Particularly, the volatilization temperature of the NaCl crystal and the growth temperature of MoS2 are established to be the key parameters that influence the growth efficiency of MoS2 at an optimized growth condition. Monolayer triangular MoS2 domain with an edge length ∼300 μm is obtained within 1 min, featured with a growth rate ∼5 μm s-1. The Na element from the NaCl crystal is found to be able to facilitate the two dimensional growth of monolayer MoS2. This work thus offers novel insights into the high-efficiency production of large-domain monolayer MoS2 on insulating growth substrates.
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