光电子学
电子
量子点
超快激光光谱学
二极管
纳秒
材料科学
电致发光
发光二极管
光谱学
吸收(声学)
瞬态(计算机编程)
光学
物理
图层(电子)
纳米技术
激光器
计算机科学
量子力学
复合材料
操作系统
作者
Xianchang Yan,Cuili Chen,Boning Wu,Fengke Sun,Hui Bao,Wenming Tian,Shuai Chang,Haizheng Zhong,Shengye Jin
标识
DOI:10.1021/acs.jpclett.4c02127
摘要
The quantum-dot light-emitting diode (QLED) is a new generation light emission source that holds great promise for display and lighting applications. Understanding the dynamics of electrons and holes in QLEDs during their operation is crucial for future QLED optimization, but a time-resolved technology capable of characterizing electrons is still lacking. To tackle this challenge, we develop a unique electrically pumped transient absorption (E-TA) spectroscopy to probe the density of electrons in the QD layer with a nanosecond time resolution. The E-TA result provides a comprehensive understanding of the electron dynamics in QLEDs by quantifying the electron injection time after external voltage on, electron release time after external voltage off, and equilibrated electron density (Ne) in the QD layer during device operation. By combining E-TA technology with time-resolved electroluminescence and transient current measurements, we present a comprehensive overview of the dynamics of both electrons and holes in a QLED during operation.
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