Comprehensive study of Schottky-gated p-channel GaN field-effect transistors

In this work, a comprehensive study of Schottky-gated p-channel GaN field-effect transistors (GaN PFETs) with an energy-band modulated AlGaN barrier layer, a variable gate structure, and various densities of holes in the p-GaN layer is demonstrated to optimize electrical performance. The design rules for high-performance Schottky-gated GaN PFETs not only offer diverse pathways to achieve enhancement-mode operation but also improve output current density. Based on the design rules, a high-performance enhancement-mode GaN PFET with a high ION/IOFF ratio of 3 × 106, a low SS of 130 mV/dec, and a negative VTH of −1.09 V is fabricated, which is conducive to promoting the development of the low-power GaN complementary metal–oxide–semiconductor driving circuits.