Performance of Sb2Se3‐Based Solar Cell: With and Without a Back Surface Field Layer

Optimizing thin‐film‐based solar cells’ efficiency is essential for expanding renewable energy deployment. Fundamental device properties such as life‐span and optical properties must be enhanced simultaneously to reduce recombination and losses. Herein, the design and numerical study of an efficient Sb 2 Se 3 ‐based dual heterojunction (n‐ZnSe/p‐Sb 2 Se 3 /p + ‐MoSe 2 ) photovoltaic cell with the help of SCAPS‐1D simulation software by using the physical parameters of various layers are presented. The thickness and doping of each layer are considered during the optimization of the device. The work functions of back and front contact also affect the overall performance. Defects in each layer and interface defects are highly responsible for the increment in series resistance. Thus, these defects are also studied. The efficiency improved significantly from 22.52% to 24.57% when MoSe 2 is used as a back surface field (BSF) layer. The results demonstrate that the addition of BSF significantly increased the open‐circuit voltage, short‐circuit current density, and fill factor, all of which are within the Shockley–Queisser limits of a dual heterojunction solar cell. This study indicates the possibility of producing highly efficient Sb 2 Se 3 heterojunction‐based solar cells.