响应度
光探测
光电探测器
光电子学
材料科学
探测器
异质结
半导体
弯曲
比探测率
响应时间
光学
计算机科学
物理
复合材料
计算机图形学(图像)
作者
Cheng-yun Dong,Xiang An,Zhicheng Wu,Zhiguo Zhu,Chao Xie,Jian‐An Huang,Lin‐Bao Luo
出处
期刊:Journal of Semiconductors
[IOP Publishing]
日期:2023-11-01
卷期号:44 (11): 112001-112001
被引量:8
标识
DOI:10.1088/1674-4926/44/11/112001
摘要
Abstract Two-dimensional layered material/semiconductor heterostructures have emerged as a category of fascinating architectures for developing highly efficient and low-cost photodetection devices. Herein, we present the construction of a highly efficient flexible light detector operating in the visible-near infrared wavelength regime by integrating a PdTe 2 multilayer on a thin Si film. A representative device achieves a good photoresponse performance at zero bias including a sizeable current on/off ratio exceeding 10 5 , a decent responsivity of ~343 mA/W, a respectable specific detectivity of ~2.56 × 10 12 Jones, and a rapid response time of 4.5/379 μ s, under 730 nm light irradiation. The detector also displays an outstanding long-term air stability and operational durability. In addition, thanks to the excellent flexibility, the device can retain its prominent photodetection performance at various bending radii of curvature and upon hundreds of bending tests. Furthermore, the large responsivity and rapid response speed endow the photodetector with the ability to accurately probe heart rate, suggesting a possible application in the area of flexible and wearable health monitoring.
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