铁电性
材料科学
屈曲
压电响应力显微镜
膜
电介质
变形(气象学)
复合材料
相(物质)
弹性能
纳米技术
光电子学
化学
量子力学
物理
生物化学
有机化学
作者
Jundong Long,Tingjun Wang,Congbing Tan,Jing Chen,Yusheng Zhou,Yingzhuo Lun,Yi Zhang,Xiangli Zhong,Yiwei Wu,Hongjia Song,Xiaoping Ouyang,Jiawang Hong,Jinbin Wang
标识
DOI:10.1021/acsami.3c12730
摘要
The characteristic of self-recovery holds significant implications for upholding performance stability within flexible electronic devices following the release of mechanical deformation. Herein, the dynamics of self-recovery in a buckling inorganic membrane is studied via in situ scanning probe microscopy technology. The experimental results demonstrate that the ultimate deformation ratio of the buckling BaTiO3 ferroelectric membrane is up to 88%, which is much higher than that of the buckling SrTiO3 dielectric membrane (49%). Combined with piezoresponse force microscopy and phase-field simulations, we find that ferroelectric domain transformation accompanies the whole process of buckling and self-recovery of the ferroelectric membrane, i.e., the presence of the nano-c domain not only releases part of the elastic energy of the membrane but also reduces the interface mismatch of the a/c domain, which encourages the buckling ferroelectric membrane to have excellent self-recovery properties. It is conceivable that the evolution of ferroelectric domains will play a greater role in the regulation of the mechanical properties of ferroelectric membranes and flexible devices.
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