微束
位错
材料科学
Burgers向量
反射(计算机编程)
结晶学
领域(数学)
变形(气象学)
光学
GSM演进的增强数据速率
几何学
应力场
平面的
物理
复合材料
数学
有限元法
计算机科学
电信
化学
计算机图形学(图像)
纯数学
热力学
程序设计语言
作者
Ryohei Tanuma,Daisuke Mori,I. Kamata,Hidekazu Tsuchida
摘要
This paper describes the strain-field analysis of threading edge dislocations (TEDs) and basal-plane dislocations (BPDs) in 4H-SiC using x-ray microbeam three-dimensional (3D) topography. This 3D topography enables quantitative strain-field analysis, which measures images of effective misorientations (Δω maps) around the dislocations. A deformation-matrix-based simulation algorithm is developed to theoretically evaluate the Δω mapping. Systematic linear calculations can provide simulated Δω maps (Δωsim maps) of dislocations with different Burgers vectors, directions, and reflection vectors for the desired cross-sections. For TEDs and BPDs, Δω maps are compared with Δωsim maps, and their excellent correlation is demonstrated. Two types of asymmetric reflections, high- and low-angle incidence types, are compared. Strain analyses are also conducted to investigate BPD-TED conversion near an epilayer/substrate interface in 4H-SiC.
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