带材弯曲
工作职能
开尔文探针力显微镜
电致发光
真空度
偶极子
光电发射光谱学
费米能级
材料科学
肖特基势垒
弯曲
光电子学
化学
凝聚态物理
电极
分析化学(期刊)
X射线光电子能谱
物理化学
纳米技术
二极管
物理
核磁共振
原子力显微镜
复合材料
有机化学
图层(电子)
量子力学
电子
色谱法
作者
Hisao Ishii,Hiroshi Oji,Eisuke Ito,Naoki Hayashi,Daisuke Yoshimura,Kazuhiko Seki
标识
DOI:10.1016/s0022-2313(99)00230-6
摘要
The basic concepts of common vacuum level and band bending in Mott–Schottky (MS) model was experimentally examined for the model interfaces of organic electroluminescent devices by using UV photoemission spectroscopy (UPS) and Kelvin probe method (KPM). We found that interfacial dipole cannot be neglected at most organic/metal interfaces and that the potential shift at the interface due to such dipole sometimes reaches over 1 eV in contrast to the assumption of the common vacuum level in MS model. Based on the observed data, possible origins of the interfacial dipole and general trends of the potential shift against the work function of the electrode metal were proposed. The band bending and Fermi level alignment were also examined at the interfaces between metals (Au, Cu, Ag, Mg, Ca) and TPD(N,N′-bis(3-methylphenyl)- N,N′- diphenyl-[1,1′-bisphenyl]-4,4′-diamine).
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