钝化
X射线光电子能谱
异质结
材料科学
等离子体增强化学气相沉积
光电子学
化学气相沉积
纳米技术
图层(电子)
化学工程
工程类
作者
Norio Onojima,Masataka Higashiwaki,Jun Suda,Tsunenobu Kimoto,Takashi Mimura,Toshiaki Matsui
摘要
SiN passivation on AlGaN∕GaN heterostructures was carried out using catalytic or plasma-enhanced chemical vapor deposition (Cat-CVD or PECVD), which has been found to increase two-dimensional electron gas (2DEG) density. The 2DEG density can be closely related to AlGaN surface properties via polarization effects. AlGaN potential barrier heights of AlGaN∕GaN heterostructures with and without SiN passivation were systematically investigated using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) measurements. The results for the XPS and C-V measurements were consistent and demonstrated that a reduction in the AlGaN potential barrier height was actually induced by SiN passivation. Furthermore, Cat-CVD SiN passivation lowered the AlGaN potential barrier height more significantly than PECVD SiN passivation did, suggesting that the passivation method can influence the AlGaN potential barrier height.
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