薄脆饼
材料科学
二硫化钼
晶体管
光电子学
场效应晶体管
纳米技术
半导体
兴奋剂
图层(电子)
电压
电气工程
复合材料
工程类
作者
Junqing Wei,Xichao Di,Fang Wang,Xin Shan,Baojun Zhang,Baojuan Xin,Weihua Wang,Zhitang Song,Kailiang Zhang
标识
DOI:10.1016/j.tsf.2021.138798
摘要
Because of their fascinating electrical/optoelectrical characteristics, two-dimensional molybdenum disulphide (MoS2) attracts much attention recently. However, it is still a challenge to fabricate wafer-scale MoS2 nanofilms of controlled thickness and high quality and that, limits their application. Here, a two-step thermal vulcanization method is proposed to fabricate wafer-scale MoS2 nanofilms with different thicknesses (3-10 layers). The synthesized MoS2 nanofilms have high uniformity and good quality. Furthermore, back gate field effect transistor (FET) arrays were fabricated based on these wafer-scale MoS2 nanofilms. The FET devices showed good electrical performance, mobility in the range of 0.44 ~ 0.96 cm2V−1s−1 and on/off ratio of ~103. Here, first-principle calculation was used to analyse the different types of defects observed in the tri-layer MoS2, the doping effects induced by the defects were also discussed. This work provides a reliable way to fabricate wafer-scale MoS2 nanofilms and give a detailed study of the electrical properties of multilayers MoS2 nanofilms paving the way for the manufacture of two-dimensional semiconductor materials.
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