Band alignment in SiC-based one-dimensional van derWaals homojunctions*
材料科学
电场
半导体
凝聚态物理
纳米技术
光电子学
物理
量子力学
作者
Xingyi Tan,Linjie Ding,Dahua Ren
出处
期刊:Chinese Physics B [IOP Publishing] 日期:2021-04-27卷期号:30 (12): 126102-126102被引量:1
标识
DOI:10.1088/1674-1056/abfbd2
摘要
The density functional theory method is utilized to verify the electronic structures of SiC nanotubes (SiCNTs) and SiC nanoribbons (SiCNRs) one-dimensional (1D) van der Waals homojunctions (vdWh) under an applied axial strain and an external electric field. According to the calculated results, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-II band alignment and robust electronic structures with different diameters or widths. Furthermore, the SiCNTs/SiCNRs 1D vdWhs are direct semiconductors with a type-I band alignment, respectively, in a range of [–0.3, –0.1] V/Å and [0.1, 0.3] V/Å and change into metal when the electric field intensity is equal to or higher than 0.4 V/Å. Interestingly, the SiCNTs/SiCNRs 1D vdWhs have robust electronic structures under axial strain. These findings demonstrate theoretically that the SiCNTs/SiCNRs 1D vdWhs can be employed in nanoelectronics devices.