锐钛矿
材料科学
金红石
扫描电子显微镜
电解质
介电谱
氟化铵
氢氧化铵
氟化物
氟化钾
氢氧化钾
模拟体液
电化学
核化学
钾
化学工程
无机化学
冶金
化学
电极
复合材料
催化作用
物理化学
工程类
光催化
生物化学
作者
K. Venkateswarlu,N. Rameshbabu,D. Sreekanth,A. Chandra Bose,V. Muthupandi,S. K. Subramanian
标识
DOI:10.1016/j.ceramint.2012.07.001
摘要
The present study is focussed at establishing an appropriate electrolyte system for developing electrochemically stable and fluorine (F) containing titania (F-TiO2) films on Cp Ti by micro-arc oxidation (MAO) technique. To fabricate the F-TiO2 films on Cp Ti, different electrolyte solutions of chosen concentrations of tri-sodium orthophosphate (TSOP, Na3PO4·12H2O), potassium hydroxide (KOH) and various F-containing compounds such as ammonium fluoride (NH4F), potassium fluoride (KF), sodium fluoride (NaF) and potassium fluorotitanate (K2TiF6) are employed. The structural and morphological characteristics, thickness and elemental composition of the developed films have been assessed by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) techniques. The in-vitro electrochemical corrosion behavior of the films was studied under Kokubo simulated body fluid (SBF) environment by potentiodynamic polarization, long term potential measurement and electrochemical impedance spectroscopy (EIS) methods. The XRD and SEM-EDS results show that the rutile content in the films vary in the range of 15–37 wt% and the F and P contents in the films is found to be in the range of 2–3 at% and 2.9–4.7 at% respectively, suggesting that the anatase to rutile phase transformation and the incorporation of F and P into the films are significantly controlled by the respective electrolyte solution. The SEM elemental mapping results show that the electrolyte borne F and P elements are incorporated and distributed uniformly in all the films. Among all the films under study, the film developed with 5 g TSOP+2 g KOH+3 g K2TiF6 electrolyte system exhibits considerably improved in-vitro corrosion resistance and therefore best suited for biomedical applications.
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