阈值电压
可靠性(半导体)
MOSFET
功率MOSFET
材料科学
光电子学
电压
负偏压温度不稳定性
压力(语言学)
过驱动电压
碳化硅
电子工程
功率(物理)
晶体管
电气工程
工程类
物理
哲学
冶金
量子力学
语言学
作者
Katja Puschkarsky,Tibor Grasser,Thomas Aichinger,Wolfgang Gustin,H. Reisinger
标识
DOI:10.1109/ted.2019.2938262
摘要
An overview over issues and findings in SiC power MOSFET reliability is given. The focus of this article is on threshold instabilities and the differences to Si power MOSFETs. Measurement techniques for the characterization of the threshold voltage instabilities are compared and discussed. Modeling of the threshold voltage instabilities based on capture-emission-time (CET) maps is a central topic. This modeling approach takes the complete gate bias/temperature history into account. It includes both gate stress polarities and is able to reproduce the short-term threshold variations during application-relevant 50-kHz bipolar ac-stress. In addition, the impact on circuit operation is discussed.
科研通智能强力驱动
Strongly Powered by AbleSci AI